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Home > chinese-english > "silicon on insulator" in English

English translation for "silicon on insulator"

绝缘硅
绝缘体上硅结构


Related Translations:
plate insulator:  感光版绝缘体
silicon varnish:  硅基漆硅树脂青漆
silicon piezoresistor:  硅力敏电阻器
earth silicon:  二氧化硅硅石
poly silicon:  复晶硅
silicon cratering:  硅弹坑形成
silicon gate:  硅栅极
silicon grease:  硅润滑油
silicon die:  硅片
silicon ferrite:  硅铁素体
Example Sentences:
1.Study on high - temperature piezoresistive pressure sensors based on silicon on insulator
绝缘体上硅高温压力传感器研究
2.The appearance of soi ( silicon on insulator ) technology has changed this situation
为了使器件能在恶劣的条件下仍能正常工作。
3.The first rs64 to use ibm copper and soi silicon on insulator , now with six processor cards scaling up to 24 - way smp
第一个使用ibm的铜和绝缘硅技术的rs64芯片,现在可以支持6个处理器卡,可以扩展为24路的smp机器。
4.Soi , namely silicon on insulator , device and ic have many advantages : low leak current , weak parasitic capacitance , low power loss , radiation hardness , and high integreted level
Soi ( silicononinsulator )器件及集成电路具有泄漏电流小、寄生电容小、功耗小、集成度高、抗辐射能力强等优点。
5.Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up , reduced leakage current , perfect irradiation hardness , and improved insulation
Soi ( silicononinsulator )高压集成电路具有无闩锁、漏电流小、抗辐射、隔离性能好等优点,已成为功率集成电路( powerintegratedcircuit )的重要发展方向。
6.As the development of soi ( silicon on insulator ) preparation technology and the decrease of soi material ’ s cost , it provides a wider space for the exploitation of high - performance hvic based on the flexibility material structure and the complete dielectric isolation technology
随着soi ( silicon - on - insulator )材料制备技术的日益成熟和成本的降低, soi技术以其独特的材料结构和全介质隔离技术为高性能soi基hvic的开发提供了广阔的空间。
7.Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近几年才出现的新型器件,它将soi材料和sige材料结合在一起,与传统体硅器件相比,表现出载流子迁移率高、电流驱动能力强、跨导大、寄生效应小等优势,特别适用于高性能、高速度、低功耗超大规模集成电路。
8.Silicon on insulator ( soi ) technology was originally invented for the niche of radiation - hard circuits . high speed , low voltage and radiation - hardness are mam three advantages presented by soi over bulk . since the cost to produce soi materials was high in the past , the application of soi materials was limited in military industry and aerospace
在这一部分中,重点总结了soi技术相对于传统的体硅技术来说的优越性, soi材料制备的方法流程, soi新型器件的特性和工艺,以及soi技术在抗辐照、耐高温、高速、低功耗、低压等领域内的应用及进展。
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